Samsung 990 EVO Plus 1TB NVMe SSD – PCIe Gen4x4/Gen5x2, M.2 2280 – Up to 7,150MB/s – TurboWrite 2.0, HMB, Internal SSD for Laptop/Desktop – Review
Samsung 990 EVO Plus SSD 1TB Specifications
Brand
Samsung
Model
990 EVO Plus 1TB (MZ-V9S1T0BW)
Digital Storage Capacity
1TB (1000GB)
Interface
PCIe Gen 4.0 x4 / Gen 5.0 x2
Read Speed
7,150 MB/s
Write Speed
6,300 MB/s
Form Factor
M.2 2280
NAND Type
236-layer TLC (V-NAND v8)
Controller
Samsung Piccolo (6-Core Cortex-R8)
Cache
No DRAM – Uses Host Memory Buffer
Power Loss Protection
No
Encryption
AES-256, TCG Opal
Warranty
5 Years / 600 TBW
Launch Price
~$110 USD
Samsung 990 EVO Plus SSD 1TB Specifications
Solid-State Drive
- Model Name: Samsung 990 EVO Plus
- Type: Internal NVMe Solid State Drive (SSD)
- Capacity: 1TB (1000 GB usable, ~92.7 GB overprovisioning)
- Launch Date: September 25th, 2024
- Warranty: 5 Years / 600 TBW
- Interface: PCIe Gen 4.0 x4 / Gen 5.0 x2
- Protocol: NVMe 2.0
- Use Case: Gaming, Personal, Business, High-Performance Tasks
Physical
- Form Factor: M.2 2280 (Single-sided)
- Dimensions: 80 x 22 x 2 mm
- Weight: 9 g
- Enclosure: 3D NAND Flash
- Color: Black
Controller
- Manufacturer: Samsung
- Model: Piccolo (S4LY022)
- Architecture: ARM Cortex-R8 (6-Core)
- Process: 5nm FinFET
- Flash Channels: 4 @ 2400 MT/s
- Features:
- Host Memory Buffer (HMB)
- TRIM & SMART support
- AES-256 Encryption (TCG Opal)
NAND Flash
- Manufacturer: Samsung
- Technology: V-NAND V8 (236-layer TLC)
- Part Number: K9OVGY8J5B-CCK0
- Die Configuration:
- 8 dies per chip
- 4 planes per die
- Charge Trap Flash
- 2 decks per die
- Die Size: 89 mm²
- Die Speed: Read 1600 MB/s, Write 164 MB/s
DRAM Cache
- Type: DRAM-less
- Uses Host Memory Buffer (HMB)
- HMB Size: 64MB (from system memory)
Performance
- Sequential Read: 7,150 MB/s
- Sequential Write: 6,300 MB/s
- Random Read: 850K IOPS
- Random Write: 1.35M IOPS
- SLC Cache: ~114 GB (108 GB Dynamic + 6 GB Static)
- Endurance: 600 TBW
- MTBF: 1.5 million hours
- DWPD: 0.3 Drive Writes/Day
Features
- PCIe Gen 4x4 & Gen 5x2 compatibility
- NVMe 2.0 Protocol
- Intelligent TurboWrite 2.0
- TRIM & SMART support
- Hardware Encryption: AES-256 (TCG Opal)
- PS5 Compatible
- DRAM-less with HMB
- Excellent thermal control (no heatsink required)
Additional Information
- Model Number: MZ-V9S1T0BW
- GTIN: 08806095575674
- ASIN: B0DGH2FH7T
- Manufacturer: Samsung, Korea
- Importer: Samsung India Electronics Pvt. Ltd.
- Customer Reviews: ★★★★☆ (4.7/5, 492 reviews)
- Best Seller Rank:
- #2,157 in Computers & Accessories
- #33 in Internal Solid State Drives
About This Item
- Next-gen Speed: Read up to 7,150 MB/s, Write up to 6,300 MB/s – 40% faster than last-gen.
- Built for Gamers & Creators: 850K+ IOPS read & 1.35M IOPS write handles AAA games & 4K editing.
- Smart, Secure & Efficient: HMB + AES-256 encryption + TurboWrite 2.0 ensures stable performance.
- Universal Compatibility: Works with laptops, desktops & PS5.
- No DRAM? No Problem: DRAM-less design with HMB keeps cost low without performance loss.
- Compact & Durable: Only 9g, 0.2cm thick – fits ultra-thin devices.
Tags:
Samsung